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Japanese researchers create a new diamond semiconductor
Japanese researchers at the National Institute of Advanced Industrial Science and Technology (AIST) fabricated an n-type semiconductor on a (001) orientation diamond substrate using a vacuum deposition process. In addition, they managed to achieve the emission of ultraviolet radiation by the p-n junction.
This is a significant achievement, since for the first time it was possible to remove the restriction on the orientation of the substrate, which was previously a bottleneck in the development of electronic devices from diamond semiconductors. While p-type diamond semiconductor material was synthesized regardless of substrate orientation, n-type material was previously only available on (111) -oriented substrates.
In the course of work, an n-type semiconductor was synthesized by a chemical vapor deposition (CVD) process using microwave plasma. Methane doped with phosphorus atoms was used as the initial gas.
Better known for its high strength and value, diamond attracts electronic developers due to its other outstanding characteristics: high thermal conductivity, high breakdown voltage and very high carrier mobility. These advantages would be very useful in electronic devices, especially ? in the field of high power and light-emitting devices with a short wavelength of radiation.
The picture shows a light emitting diode made using n-type material on a substrate with orientation (001).