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NEC Ultimate Low Power Technology: Let ICs Run 10x Longer!
NEC Corp. Announces Development of Technology to Reduce Leakage Current in Semiconductor ICs Using High-K Dielectrics. Leakage current is a quantity that determines the power consumed in standby or inactive mode.
According to NEC, the company managed to achieve a leakage current of 1.4 pA for p-n-p FETs and 0.3 pA for n-p-n transistors. Again, according to NEC, this leakage current is 30 times less than that of conventional microcircuits, and this allows us to hope that microcircuits made using the new technology will operate from power sources up to 10 times longer. New technology is at the core of NEC’s Ultimate Low Power initiative to bring energy-efficient technologies to 65nm and 45nm processes.
It is also noted that if the power consumption in standby mode in circuits made according to 180-nm and 130-nm standards is negligible compared to the power consumed in active mode, then the use of existing technologies in 65-nm technical processes can lead to an increase in power consumption. in standby mode to a level exceeding the power consumption in active mode.
The leakage current is influenced by three main factors: tunneling effects leading to the migration of electrons between the gate and drain under the potential barrier, the current through the gate insulator, and the drain current induced by the same effect. To reduce the influence of the last two factors, a high-k dielectric (HfSiON) was used.